Title :
Simulation of the temperature dependence of a-Si:H solar cell current-voltage characteristics
Author :
Otero, P. ; Rodriguez, J.A. ; Vetter, M. ; Andreu, J. ; Comesana, E. ; Garcia-Loureiro, A.J.
Author_Institution :
Dept. Technol., Dev. & Innovation, T-Solar Global S.A., San Cibrao das Viñas, Spain
Abstract :
Simulation data of the performance of amorphous hydrogenated silicon (a-Si:H) thin film solar cells using the software package Sentaurus TCAD (Synopsis Inc) are presented. The Sentaurus software is configured with standard theoretical models describing e. g. the density of states in the mobility gap of a-Si:H, generation/recombination statistics, optical data of a-Si:H thin films, etc. to calculate illuminated current voltage curves and the respective spectral response for the initial and degraded state of solar cell. The study of the temperature dependence of the electrical parameters of solar cell is realized. The simulations results were compared with experimental data measured in T-Solar laboratory obtaining a good coincidence.
Keywords :
amorphous semiconductors; hydrogen; solar cells; technology CAD (electronics); thin film devices; Si:H; T-solar laboratory; TCAD; amorphous hydrogenated silicon thin film solar cell; current voltage characteristics; electrical parameter; illuminated current voltage curves; software package sentaurus; spectral response; temperature dependence; Computational modeling; Mathematical model; Optical reflection; Photovoltaic cells; Silicon; Temperature; Temperature measurement; Sentaurus; Solar cell; amorphous hydrogenated silicon; current voltage curve; simulation;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744227
