DocumentCode :
2858324
Title :
Linear mode Reach — Through Avalanche Photodiodes for medium energy X-ray detection
Author :
Fernández-Martínez, P. ; Cortés, I. ; Hidalgo, S. ; Flores, D. ; Pellegrini, G. ; Lozano, M.
Author_Institution :
CSIC, Inst. de Microelectron. de Barcelona, Barcelona, Spain
fYear :
2011
fDate :
8-11 Feb. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Reach-Through Avalanche Photodiodes (RT-APD) for medium energy X-ray detection, with 300 μm thick active region, have been devised, fabricated and characterised at the IMB-CNM clean room. The RT-APD structure and principle of operation are detailed in this paper, together with the main modifications introduced over its general design in order to improve the device performance. The optimisation of these parameters has been made with the aid of TCAD simulations, which suitability is showed here. Finally, the main aspects of the fabrication process and the first characterisation results have been also included.
Keywords :
X-ray detection; avalanche photodiodes; technology CAD (electronics); TCAD simulation; fabrication process; medium energy X-ray detection; parameter optimisation; reach-through avalanche photodiodes; Avalanche photodiodes; Detectors; Electric fields; Junctions; Optimization; Photonics; Silicon; Photodiodes (RT-APD); Reach-Through Avalanche; TCAD simulation; X-ray detection; linear mode; silicon detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
Type :
conf
DOI :
10.1109/SCED.2011.5744229
Filename :
5744229
Link To Document :
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