Integrated passive devices using Al/BCB thin films

Author

Clearfield, H.M. ; Wijeyesekera, S. ; Logan, E.A. ; Luu, A. ; Gieser, D. ; Lin, C.-M. ; Jing, J. ; Rogers, W.B. ; Scheck, D. ; Benson, D. ; He, J.

Author_Institution

Intarsia Corp., Fremont, CA, USA

fYear

1998

fDate

15-17 Apr 1998

Firstpage

501

Lastpage

505

Abstract

A new structure for thin film integrated passive devices using aluminum interconnection and photo-BCB dielectrics is introduced. The structure is capable of providing a range of capacitance values spanning four orders of magnitude, making it suitable for both digital and high frequency applications. The thin films are built on glass substrates in a 350×400 mm format to take advantage of the economy of scale that comes from such a format. The structure is described and preliminary characterization and reliability test results are summarized

Keywords

aluminium; dielectric thin films; digital circuits; electron device testing; inductors; microwave circuits; packaging; polymer films; reliability; thin film capacitors; thin film devices; thin film resistors; 350 mm; 400 mm; Al; Al/BCB thin films; aluminum interconnection; capacitance; digital applications; glass substrates; high frequency applications; integrated passive devices; photo-BCB dielectrics; reliability test; thin film integrated passive devices; Aluminum; Capacitance; Dielectric devices; Dielectric substrates; Dielectric thin films; Economies of scale; Frequency; Glass; Testing; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Multichip Modules and High Density Packaging, 1998. Proceedings. 1998 International Conference on

Conference_Location

Denver, CO

Print_ISBN

0-7803-4850-8

Type

conf

DOI

10.1109/ICMCM.1998.670831

Filename

670831