Title :
Optoelectronic properties in InAs/GaAs quantum dots arrays systems
Author :
Rodríguez, A. Luque ; Rodríguez-Bolívar, S. ; Gómez-Campos, F.M. ; Villanueva, J. A López ; Tejada, J. A Jiménez ; García, T. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain
Abstract :
A study of the physics of electronic states in cubic InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the size and density of the quantum dots. The effect of strain is also taken into account in the simulations. The photon-electron absorption coefficient is obtained for different quantum dot configurations and different light polarization as well.
Keywords :
III-V semiconductors; absorption coefficients; conduction bands; gallium arsenide; indium compounds; infrared spectra; nanostructured materials; photoexcitation; semiconductor quantum dots; InAs-GaAs; conduction band; electron states; electronic states; light polarization; miniband structure; optoelectronic properties; photon-electron absorption coefficient; quantum dot arrays; quantum dot periodic nanostructures; Absorption; Gallium arsenide; Mathematical model; Optical polarization; Photonics; Photovoltaic cells; Quantum dots; miniband; nanostructues; optical absorption; quantum dot;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744240
