High-sensitivity charge-transfer sense amplifier

THE ONE-DEVICE dynamic memory cell, consisting of a single gating transistor and a storage capacitor, is attractive because of its low power consumption, its simple cell structure and its potential for high density. Density, however, is tied directly to the sensitivity of the detection circuit. It is the object of this paper to present a sense amplifier circuit with much better sensitivity than the standard latch circuit??, while maintaining the feature of conveniently restoring the information in the cell.