Simulation of Total Ionising Dose in MOS capacitors

Total Ionising Dose (TID) effects are the most important effects of ionising radiation in MOS devices. Among others, TID cause charge trapping in the oxide and in the oxide-semiconductor interface. In this work we develop physical simulation models of charge trapping TID effects in MOS capacitors, in order to have a calculation model for postirradiation experiments. Simulations are made using the Sentaurus TCAD suite, comparing results with well established literature. We calculate the modifications in the C-V curve and the dependence of the flat band voltage due to charge trapping in the oxide, interface traps and the combination of both for increasing dose.