Title :
Oscillator and amplifier devices for millimeter applications
Author_Institution :
Cornell University, Ithaca, NY, USA
Abstract :
As radio communications (including mobile) move into the millimeter wave range, greatly expanded applications for active devices operating in this range can be foreseen. The merits and demerits of GaAs and Si IMPATT diodes, GaAs and InP transferred-electron devices, and GaAs and InP FETs, for use in the 15-100 GHz frequency range, will be covered.
Keywords :
Circuit noise; FETs; Frequency; Gallium arsenide; Indium phosphide; Millimeter wave devices; Oscillators; Semiconductor device noise; Semiconductor diodes; Semiconductor materials;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155408
