DocumentCode
2858885
Title
Oscillator and amplifier devices for millimeter applications
Author
Frey, Jesse
Author_Institution
Cornell University, Ithaca, NY, USA
Volume
XVIII
fYear
1975
fDate
27426
Firstpage
157
Lastpage
157
Abstract
As radio communications (including mobile) move into the millimeter wave range, greatly expanded applications for active devices operating in this range can be foreseen. The merits and demerits of GaAs and Si IMPATT diodes, GaAs and InP transferred-electron devices, and GaAs and InP FETs, for use in the 15-100 GHz frequency range, will be covered.
Keywords
Circuit noise; FETs; Frequency; Gallium arsenide; Indium phosphide; Millimeter wave devices; Oscillators; Semiconductor device noise; Semiconductor diodes; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type
conf
DOI
10.1109/ISSCC.1975.1155408
Filename
1155408
Link To Document