DocumentCode
2859034
Title
An adequate structure for power microwave FETs
Author
Vergnolle, C. ; Funck, R. ; Laviron, M.
Author_Institution
Thomson-CSF, Orsay, France
Volume
XVIII
fYear
1975
fDate
27426
Firstpage
66
Lastpage
67
Abstract
The development of a high-power GaAs FET using an interdigitated structure produced by ionic etching on a NP+ epitaxial wafer will be discussed, citing its power output (1W), efficiency (35%) and gain (6 dB) achieved at 6 GHz.
Keywords
Equivalent circuits; Etching; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Irrigation; Power generation; Power measurement; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type
conf
DOI
10.1109/ISSCC.1975.1155419
Filename
1155419
Link To Document