Title :
Performance of dual-gate GaAs MESFETs as gain-controlled low-noise amplifiers and high-speed modulators
Author_Institution :
Hewlett-Packard Company, Palo Alto, CA, USA
Abstract :
A dual-gate GaAs MESFET with maximum gain of 18 dB at 10 GHz and minimum noise figure of 4 dB with 12 dB associated gain will be described. Variation of second gate potential has been found to yield gain modulation with a 44 dB dynamic range and 70 ps risetime.
Keywords :
Frequency; Gain; Gallium arsenide; Impedance; Low-noise amplifiers; MESFETs; Microwave FETs; Noise figure; Pulse modulation; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155420
