DocumentCode :
2859120
Title :
An evaluation of GaAs FET oscillators and mixers for integrated front-end applications
Author :
Pucel, R. ; Bera, Rajesh ; Masse, D.
Author_Institution :
Raytheon Company, Waltham, MA, USA
Volume :
XVIII
fYear :
1975
fDate :
27426
Firstpage :
62
Lastpage :
63
Abstract :
An experimental evaluation of GaAs FETs as local oscillators and mixers at X-band will be reported, citing, as examples, FET mixers with gains in excess of 6 dB and oscillators with outputs exceeding 5 mW.
Keywords :
Dielectric substrates; Frequency; Gallium arsenide; Local oscillators; Microwave FETs; Microwave devices; Mixers; Radiofrequency amplifiers; Schottky diodes; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type :
conf
DOI :
10.1109/ISSCC.1975.1155423
Filename :
1155423
Link To Document :
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