• DocumentCode
    2859274
  • Title

    The study of activation energy(Ea) by aging and high temperature storage for quartz resonator´s life evaluation

  • Author

    Chun-Nan Shen ; Xiao-wei Yang ; Chang, Carole ; Min-Chiang Chao

  • Author_Institution
    TXC (NINGBO) Corp., Ningbo, China
  • fYear
    2010
  • fDate
    10-13 Dec. 2010
  • Firstpage
    118
  • Lastpage
    122
  • Abstract
    This paper studied the mechanisms and models of activation energy(Ea) based on the experiment data from quartz resonator long-term aging and high temperature storage. Furthermore, the product´s life could be forecasted under the thermal and bias accelerated environment. 5.0 mm × 3.2 mm metal sealed quartz resonators were used for case study, it indicated the activation energy of high temperature storage which only effected by thermal acceleration factor is higher than aging one. The activation energy of long-term aging shows cube decay tendency when thermal and bias accelerators both exist, that would dramatically reduce the predicted accuracy of product life. The activation energy of current manufactured 5.0 mm × 3.2 mm metal sealed quartz resonator was confirmed as 0.578 eV by regress verification according to the Arrhenius accelerated theory, 85°C for 7 days accelerated aging can predict and guarantee which is equivalent as continue operation for 0.83 year at 25°C without fail.
  • Keywords
    ageing; crystal resonators; thermal analysis; Arrhenius accelerated theory; activation energy model; bias accelerators; electron volt energy 0.578 eV; high temperature storage; long-term aging; metal sealed quartz resonators; quartz resonator life evaluation; temperature 25 degC; temperature 85 degC; thermal acceleration factor; time 0.83 year; time 7 day; Acceleration; Aging; Frequency control; Integrated circuits; Metals; Temperature distribution; Activation Energy; Aging; High Temperature Storage; Quartz Resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2010 Symposium on
  • Conference_Location
    Xiamen
  • Print_ISBN
    978-1-4244-9822-2
  • Type

    conf

  • DOI
    10.1109/SPAWDA.2010.5744286
  • Filename
    5744286