DocumentCode
2859290
Title
A 10-W 6-GHz GaAs IMPATT amplifier for microwave radio systems
Author
Tatsuguchi, I. ; Gewartowski, J.
Author_Institution
Bell Laboratories, Allentown, PA, USA
Volume
XVIII
fYear
1975
fDate
27426
Firstpage
134
Lastpage
135
Abstract
This paper will cover an IMPATT amplifier using five flat-doping-profile GaAs diodes in three cascaded, circulator-coupled stages, suitable for power amplifier use in a longhaul FM radio relay system.
Keywords
Circuit noise; Coaxial components; Diodes; Frequency; Gallium arsenide; Microwave amplifiers; Noise figure; Power amplifiers; Power generation; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type
conf
DOI
10.1109/ISSCC.1975.1155433
Filename
1155433
Link To Document