Title :
Strained layer quantum well laser with simultaneous high power and narrow linewidth
Author :
Reid, T.J. ; Williams, P. ; Hurley, J. ; Carr, N. ; Robbins, D.J. ; Eddolls, D. ; Buus, J.
Author_Institution :
GEC-Marconi Materials Technology Ltd., Towcester, UK
Abstract :
Strained layer MQW ridge waveguide DFB lasers, emitting at 1.57μm, with simultaneous high power (over 50 mW) and narrow linewidth (under 1MHz) have been fabricated. The authors report on the MOCVD growth and the assessment of these lasers
Keywords :
distributed feedback lasers; laser transitions; semiconductor growth; semiconductor lasers; spectral line breadth; vapour phase epitaxial growth; 1.57 micron; 50 mW; MOCVD growth; high power; narrow linewidth; ridge waveguide DFB lasers; strained layer MQW lasers;
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
