DocumentCode
285932
Title
Growth and assessment of GaInP/GaAs/GaInAs quantum well lasers
Author
Glew, L.W. ; Henshall, G.D. ; Collar, A.J. ; Moule, D.J.
Author_Institution
BNR Europe Ltd., Harlow, UK
fYear
1993
fDate
34033
Firstpage
42644
Lastpage
42647
Abstract
GaAs/GaInAs strained quantum well lasers with InGaP cladding layers are suitable for pumping Er-doped fibre amplifiers. The authors report on the MOCVD growth and assessment of ridge waveguide lasers operating at 980 nm
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 980 nm; GaInP-GaAs-GaInAs; GaInP/GaAs/GaInAs quantum well lasers; III-V semiconductor; MOCVD growth; ridge waveguide lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
230873
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