DocumentCode :
285933
Title :
Properties of gain-levered InGaAs/InP quantum well lasers
Author :
Seltzer, C.P. ; Westbrook, L.D. ; Wickes, H.J.
Author_Institution :
BT Labs., Ipswich, UK
fYear :
1993
fDate :
34033
Firstpage :
42614
Lastpage :
42617
Abstract :
The gain-lever effect in long wavelength MQW lasers is studied for the first time. One application for improved fibre-microwave systems is in the area of mobile communications. The authors have measured the enhancement in AM response and RIN of InGaAs/InP MQW lasers at frequencies relevant to mobile and cellular communications systems. An AM enhancement of 10dB is seen at a frequency of 900 MHz with only a small increase in RIN. This leads to an improvement in the signal-to-noise ratio at the same frequency of 7.5 dB. Calculations demonstrate the existence of a trade-off between reduced link loss and noise figure, and reduced intermodulation and increased intermodulation free dynamic range
Keywords :
III-V semiconductors; amplitude modulation; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; 900 MHz; AM response; InGaAs-InP; RIN; cellular communications systems; fibre-microwave systems; gain-levered InGaAs/InP quantum well lasers; intermodulation free dynamic range; link loss; long wavelength MQW lasers; mobile communications; noise figure; signal-to-noise ratio;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
230874
Link To Document :
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