Properties of gain-levered InGaAs/InP quantum well lasers

Author

Seltzer, C.P. ; Westbrook, L.D. ; Wickes, H.J.

Author_Institution

BT Labs., Ipswich, UK

fYear

1993

fDate

34033

Firstpage

42614

Lastpage

42617

Abstract

The gain-lever effect in long wavelength MQW lasers is studied for the first time. One application for improved fibre-microwave systems is in the area of mobile communications. The authors have measured the enhancement in AM response and RIN of InGaAs/InP MQW lasers at frequencies relevant to mobile and cellular communications systems. An AM enhancement of 10dB is seen at a frequency of 900 MHz with only a small increase in RIN. This leads to an improvement in the signal-to-noise ratio at the same frequency of 7.5 dB. Calculations demonstrate the existence of a trade-off between reduced link loss and noise figure, and reduced intermodulation and increased intermodulation free dynamic range

Keywords

III-V semiconductors; amplitude modulation; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; 900 MHz; AM response; InGaAs-InP; RIN; cellular communications systems; fibre-microwave systems; gain-levered InGaAs/InP quantum well lasers; intermodulation free dynamic range; link loss; long wavelength MQW lasers; mobile communications; noise figure; signal-to-noise ratio;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Well Technologies, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

230874