Title :
Extended cavity lasers formed by fluorine induced quantum well disordering
Author :
Bradshaw, S.A. ; Marsh, J.H. ; Glew, R.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
An oxide stripe extended cavity laser has been fabricated by neutral impurity induced disordering, using F ion implantation in the InGaAsP/InGaAs/InP system, followed by an anneal at 700°C for 30 seconds. Losses of 12.5 dB cm-1 have been measured in the laser by studying the luminescence from the active and passive facets below threshold. This relatively small loss is in agreement with the small change in threshold current between an oxide stripe laser with and without the integrated passive cavity
Keywords :
III-V semiconductors; fluorine; gallium arsenide; indium compounds; integrated optics; ion implantation; laser cavity resonators; optical losses; semiconductor lasers; 12.5 dB; 30 s; 700 degC; F impurity induced quantum well disordering; F ion implantation; III-V semiconductor; InGaAsP-InGaAs-InP:F; integrated passive cavity; integration; losses; luminescence; oxide stripe extended cavity laser; passive facets; threshold current;
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
