Extended cavity lasers formed by fluorine induced quantum well disordering

Author

Bradshaw, S.A. ; Marsh, J.H. ; Glew, R.W.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1993

fDate

34033

Firstpage

42552

Lastpage

42555

Abstract

An oxide stripe extended cavity laser has been fabricated by neutral impurity induced disordering, using F ion implantation in the InGaAsP/InGaAs/InP system, followed by an anneal at 700°C for 30 seconds. Losses of 12.5 dB cm^-1 have been measured in the laser by studying the luminescence from the active and passive facets below threshold. This relatively small loss is in agreement with the small change in threshold current between an oxide stripe laser with and without the integrated passive cavity

Keywords

III-V semiconductors; fluorine; gallium arsenide; indium compounds; integrated optics; ion implantation; laser cavity resonators; optical losses; semiconductor lasers; 12.5 dB; 30 s; 700 degC; F impurity induced quantum well disordering; F ion implantation; III-V semiconductor; InGaAsP-InGaAs-InP:F; integrated passive cavity; integration; losses; luminescence; oxide stripe extended cavity laser; passive facets; threshold current;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Well Technologies, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

230876

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=285935