Title :
A study of carrier sweep-out in biased MQW p-i-n structures using time-resolved photoluminescence
Author :
Massa, John S. ; Buller, Gerald S. ; Fancey, Stuart J. ; Walker, Andrew C.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
Abstract :
Time-resolved photoluminescence measurements are taken as a function of bias-voltage for MQW p-i-n diodes with different barrier thicknesses and mesa sizes. The two devices studied had different barrier thicknesses and were on standard S-SEED and L-SEED chips. The former device consists of 60.5 periods of 100 Å GaAs wells and 65 Å Al0.3Ga0.7As barriers whilst the latter consists of 70.5 periods of 100 Å GaAs wells and 35 Å Al0.3Ga0.7As barriers
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; gallium arsenide; luminescence of inorganic solids; p-i-n diodes; photoluminescence; semiconductor quantum wells; time resolved spectra; 100 AA; 35 AA; 65 AA; GaAs-Al0.3Ga0.7As; III-V semiconductor; L-SEED chips; S-SEED; barrier thicknesses; bias-voltage; biased MQW p-i-n structures; carrier sweep-out; mesa sizes; p-i-n diodes; time-resolved photoluminescence;
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
