Integration of GaAs quantum well devices using dielectric cap disordering

Dielectric cap disordering has been used to fabricate low loss waveguide regions in GaAs/AlGaAs quantum well material. These have been integrated with an undisordered laser region to form extended cavity lasers with cavity lengths of up to 2 mm and propagation losses as low as 4 cm^-1. Furthermore, extended ridge waveguide cavities have been fabricated with Bragg reflectors to form DBR lasers with gratings of length 1 mm. Dielectric cap disordering has also been used to demonstrate selective intermixing in selected areas enabling regions of different band cap to be created simultaneously in one piece of epitaxial material