Title :
High power performance of asymmetric Fabry-Perot MQW modulators
Author :
Mottahedeh, R. ; Parry, G. ; Roberts, J.S. ; Button, C.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
Abstract :
Reports the modulation characteristics of a GaAs/AlGaAs MQW asymmetric Fabry-Perot modulator (AFPM) at high optical powers. It is known that nonlinear optical effects limit the performance of non-resonant devices so that low optical powers have to be used. The authors demonstrate that the Fabry-Perot configuration permits high contrast modulation at much higher optical powers. Contrast ratios of 50:1 with an optical intensity of 8.8 KW cm-2 and absolute reflection changes as high as 70% are obtained with intensities up to 26 KW cm-2
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs-AlGaAs; III-V semiconductors; absolute reflection changes; asymmetric Fabry-Perot MQW modulators; high contrast modulation; high power performance; modulation characteristics; nonlinear optical effects; optical intensity;
Conference_Titel :
Applications of Quantum Well Technologies, IEE Colloquium on
Conference_Location :
London
