DocumentCode :
2859422
Title :
Double implanted bipolar high-speed gates with low-power dissipation
Author :
Graul, J. ; Kaiser, Hartmut ; Wilhelm, W. ; Ryssel, H. ; Kranz, H.
Author_Institution :
Siemens AG, Munich, W. Germany
Volume :
XVIII
fYear :
1975
fDate :
27426
Firstpage :
120
Lastpage :
121
Abstract :
This paper will discuss an investigation of the speed power relations of oxide-isolated subnanosecond logic gate circuits (ECL and E2CL) compared with double-diffused circuits. Under optimizing aspects, with respect to propagation delay, data of double-implanted integrated bipolar transistors and circuit performance will be given, dependent on implantation parameters.
Keywords :
Bipolar transistors; Boron; Circuit testing; Ion implantation; Logic design; Logic gates; Logic testing; Microwave transistors; Propagation delay; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type :
conf
DOI :
10.1109/ISSCC.1975.1155442
Filename :
1155442
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2859422
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