Title :
Electrical characteristics and modeling of ion-implanted resistors
Author :
Bergeron, D. ; Hansen, Henrik
Author_Institution :
IBM Corp., Manassas, VA, USA
Abstract :
This paper will discuss tradeoffs between sheet resistance, operating voltage, temperature and other process parameters modeled and experimentally verified for boron-implanted resistors over a broad range of process and operating conditions.
Keywords :
Circuits; Doping; Electric variables; Immune system; Implants; Impurities; Poisson equations; Resistors; Temperature; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155468
