DocumentCode
2859785
Title
Electrical characteristics and modeling of ion-implanted resistors
Author
Bergeron, D. ; Hansen, Henrik
Author_Institution
IBM Corp., Manassas, VA, USA
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
208
Lastpage
209
Abstract
This paper will discuss tradeoffs between sheet resistance, operating voltage, temperature and other process parameters modeled and experimentally verified for boron-implanted resistors over a broad range of process and operating conditions.
Keywords
Circuits; Doping; Electric variables; Immune system; Implants; Impurities; Poisson equations; Resistors; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155468
Filename
1155468
Link To Document