Title :
Continuously charge-coupled random-access memory (C3RAM)
Author_Institution :
Siemans AG, Munich, Germany
Abstract :
A C3RAM (tAcc= 250 ns), where single-transistor memory cells are combined with MOS-transmission-lines, will be covered. Development provides an almost lossless charge transport and the design of a 300 μm2memory cell using 5-μm design rules.
Keywords :
Attenuation; Capacitors; Differential equations; Propagation losses; Pulse amplifiers; Random access memory; Read-write memory; Silicon; Solid state circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155475
