DocumentCode :
2859937
Title :
Fabrication of PZT BY sol-gel method
Author :
Chen, Bing-Huei ; Wu, Long ; Chure, Ming-Cheng ; Chen, Yeong-Chin
Author_Institution :
Dept. of Electr. Eng., Nan Jeon Inst. of Technol., Tainan, Taiwan
fYear :
2010
fDate :
10-13 Dec. 2010
Firstpage :
310
Lastpage :
314
Abstract :
The sol-gel method was used to prepare the high purity lead zirconate titanate Pb(Zr,Ti)O3 (PZT) piezoelectric ceramic powders. To determine the optimum fabrication process, the influence of calcined conditions and sintering conditions on the characteristics of PZT bulk was studied. After calcined at 900°C for 4hr, and then sintered at 1100°C for 2hr, the density of the bulk ceramics nearly equal to 8g/cm3. The polycrystalline PZT thin film was prepared by using spin coating method. The PZT thin films with lower gel concentration of 0.2M were used, and deposited on Al/Si3N4/Si(100) substrate. After drying at 150°C, pre-baking at 350°C and sintering at 600°C~700°C, the amorphous PZT thin films have been changed to perovskite-type crystal structure. The influence of gel solutions concentration and heating conditions on the morphology of PZT thin films were discussed. The cracking problem was alleviated by employing lower gel concentration of 0.2 M with a drying at 150°C for 5 min and a pre-baking at 350°C for 10 min, and then sintering at 700°C for 30 min with a heating rate 50°C/min. The values of the remanent polarization (Pr) and coercive field (Ec) are 11.39μc/cm2 and 84.52 kV/cm, respectively.
Keywords :
amorphous state; calcination; cracks; drying; ferroelectric coercive field; lead; nanofabrication; piezoelectric thin films; sintering; sol-gel processing; spin coating; Al-Si3N4-Si; Al-Si3N4-Si(100) substrate; PZT; PZT bulk; PZT thin film morphology; Pb(Zr,Ti)O3 piezoelectric ceramic powders; amorphous PZT thin films; bulk ceramic density; calcination; coercive field; cracking problem; drying; gel concentration; high purity lead zirconate titanate; optimum fabrication process; perovskite-type crystal structure; polycrystalline PZT thin film; remanent polarization; sintering conditions; sol-gel method; spin coating method; temperature 1100 degC; temperature 150 degC; temperature 350 degC; temperature 600 degC to 700 degC; temperature 900 degC; time 10 min; time 2 h; time 30 min; time 4 h; time 5 min; Ceramics; Films; Heating; Lead; Powders; Substrates; Zirconium; Lead zirconate titanate; piezoelectric thin film; sol-gel method; spin coating method;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2010 Symposium on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-9822-2
Type :
conf
DOI :
10.1109/SPAWDA.2010.5744326
Filename :
5744326
Link To Document :
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