Title :
Chip and system characteristics of a 2048-bit MNOS-BORAM LSI circuit
Author :
Lodi, R. ; Wegener, H.A. ; Kosicki, B. ; Borovicka, M. ; Moberg, W. ; Newman, Robert ; Beltz, C.
Author_Institution :
Sperry Research Center, Sudbury, MA, USA
Abstract :
A Block-Oriented Random-Access Memory utilizing non-volatile MOS memory will be discussed. Module organization is 32 blocks of 256 words, each word having 36 bits.
Keywords :
Circuits; Dielectric devices; Dielectric substrates; Epitaxial layers; Frequency; Heart; Large scale integration; Manufacturing; Nonvolatile memory; Shift registers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155495
