Title :
Dynamic behavior of active charge in I2L transistors
Author_Institution :
Philips Research Laboratory, Eindhoven, Netherlands
Abstract :
To explore the dynamic excess minority-carrier concentrations internal to the classical I2L structure during switching, transient calculations have been made on lumped transistor models. Measurement results on short ring oscillators will be discussed.
Keywords :
Charge carrier processes; Delay effects; Electrons; Logic circuits; Physics; Pulse measurements; Ring oscillators; Solid modeling; Solid state circuits; Switches;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155497
