• DocumentCode
    2860252
  • Title

    Dynamic behavior of active charge in I2L transistors

  • Author

    Lohstroh, J.

  • Author_Institution
    Philips Research Laboratory, Eindhoven, Netherlands
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    To explore the dynamic excess minority-carrier concentrations internal to the classical I2L structure during switching, transient calculations have been made on lumped transistor models. Measurement results on short ring oscillators will be discussed.
  • Keywords
    Charge carrier processes; Delay effects; Electrons; Logic circuits; Physics; Pulse measurements; Ring oscillators; Solid modeling; Solid state circuits; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155497
  • Filename
    1155497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2860252