Title :
Small geometry effects on poly-Si gated MOSFET devices
Author_Institution :
Electron Technology Services, Westerham, UK
Abstract :
Summary form only given. The dependence of MOSFET threshold voltage VT on device length, L and width, W is described; V T is also a function of drain voltage, VDS and the slope of this function depends on the back surface bias, VBS. All these principal features of small geometry effects are explained in a non-mathematical fashion with diagrams of the fringing electrostatic field from the polysilicon gate electrode. Data on VT dependence on VDS and VBS are presented; even at an effective channel length as long as 3 microns a non-scaled device can have poor short channel performance with huge VT dependence on geometry and steep VT dependence on VDS
Keywords :
elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; Si-SiO2; back surface bias; channel length; drain voltage; fringing electrostatic field; polysilicon gated MOSFET; punchthrough voltage; scaling theory; small geometry effects; threshold voltage;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
