Process and device modelling of VLSI polysilicon components

Author

Jones, S.K. ; Hill, C.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1993

fDate

23-24 Mar 1993

Abstract

One of the universally used materials in key device components is polysilicon: used in bipolar VLSI for both emitter and contact regions of the bipolar transistor and resistor structures; and in CMOS VLSI for the gate contact and advanced isolation regions. Progress in simulation of some of these important structures using the 2D process simulator STORM and device simulator HFIELDS is presented. The polysilicon process model utilized in these simulators incorporates the influence of polysilicon materiel properties and processes on dopant and mechanical stress distributions as well as device characteristics. Examples demonstrate its application to simulation of processes and devices from current industrial VLSI technology

Keywords

VLSI; bipolar transistors; elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; oxidation; semiconductor device models; semiconductor process modelling; silicon; 2D process simulator; CMOS VLSI; HFIELDS; STORM; Si; VLSI polysilicon components; advanced isolation regions; bipolar VLSI; bipolar transistor; contact regions; device modelling; dopant distribution; emitter region; gate contact region; industrial VLSI technology; mechanical stress distributions; oxidation; polysilicon emitter geometry; polysilicon process model; resistor structures;

fLanguage

English

Publisher

iet

Conference_Titel

Poly-Si Devices and Applications, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

231007