Polysilicon thin film transistors for isolated protection circuits within an insulated gate bipolar transistor process

The authors investigate the processing of polysilicon thin film transistors of a type suitable for merging with silicon power devices such as DMOSTs and IGBTs. They find it is possible to make such devices with a performance about one tenth that of the equivalent single crystal device. Complementary field effect transistors can be made without undue process complication. They are confident that these possibilities create new opportunities for power devices with increased functionality