Title :
Thermionic-diffusion of minority carriers in polysilicon emitters
Author :
Al-Bustani, A. ; Mostafa, A.S.
Author_Institution :
Dept. of Comput. & Electron., Central Lancashire Univ., UK
Abstract :
A modified analysis has been developed to study the hole current through an n-type polysilicon emitter of a Bulk Unipolar (Barrier) Transistor BU(B)T. A serial mechanism of both the thermionic-emission at the poly-monosilicon interface and the diffusion at the BU(B) side of the structure, has been considered in developing the minority-carrier transport equation
Keywords :
elemental semiconductors; minority carriers; silicon; transistors; Si; bulk unipolar barrier transistor; diffusion; hole current; minority carriers; minority-carrier transport equation; poly-monosilicon interface; polysilicon emitters; serial mechanism; thermionic-emission;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
