DocumentCode
286031
Title
Polysilicon for bipolar technology and circuits
Author
Ghannam, M.Y.
Author_Institution
IMEC, Leuven, Belgium
fYear
1993
fDate
23-24 Mar 1993
Firstpage
42675
Lastpage
42678
Abstract
The properties of polysilicon emitter contacts in bipolar transistors are discussed. Self-aligned processes using single and double polysilicon layer technology such as SICOS and trench isolated bipolar technology, and the implementation of vertical pnp polysilicon emitter transistors in complementary bipolar technology are reviewed. The performances of state of the art digital ECL bipolar circuits and of bipolar SRAMs and PROMs are presented
Keywords
PROM; SRAM chips; bipolar integrated circuits; bipolar transistors; elemental semiconductors; emitter-coupled logic; integrated circuit technology; integrated logic circuits; silicon; SICOS; Si; bipolar PROM; bipolar SRAM; bipolar technology; bipolar transistors; complementary bipolar technology; digital ECL bipolar circuits; double polysilicon layer technology; polysilicon emitter contacts; self aligned processes; single polysilicon layer technology; trench isolated technology; vertical p-n-p polysilicon emitter transistors;
fLanguage
English
Publisher
iet
Conference_Titel
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
231010
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