Title :
In-situ phosphorous doped VLPCVD poly-Si layers for polysilicon thin film transistors
Author :
Sarret, M. ; Liba, A. ; Fortin, B. ; Le Bihan, F. ; Pichon, L. ; Bonnaud, O.
Author_Institution :
Rennes I Univ., France
Abstract :
The authors have developed a Very Low Pressure Chemical Vapor Deposition process (VLPCVD) allowing in-situ phosphorous doping and have tried both to control the doping level in a large range and to get a related high conductivity. They show that controlling the deposition parameters allows one to optimize the film conductivity, free carrier mobility, and doping efficiency. This process has been used to fabricate source and drain regions of thin film transistors
Keywords :
Hall effect; carrier mobility; chemical vapour deposition; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; phosphorus; semiconductor doping; semiconductor growth; silicon; thin film transistors; Hall mobility; Si:P; doping efficiency; doping level; drain regions; free carrier mobility; high conductivity; in situ doping; polysilicon thin film transistors; source region; very low pressure CVD;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
