• DocumentCode
    2860325
  • Title

    Base current of I2L transistors

  • Author

    Wulms, H.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    92
  • Lastpage
    93
  • Abstract
    Several models of the I2L transistors are known and the inverse operating NPN models have also been probed. This paper will assess the factors which determine the base current of I2L transistors, a test chip with 33 different geometrical I2L types, serving as a measurement base.
  • Keywords
    Area measurement; Current measurement; Electrons; Epitaxial layers; Logic circuits; Logic devices; Solid modeling; Spontaneous emission; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155501
  • Filename
    1155501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2860325