• DocumentCode
    286033
  • Title

    Observation and modelling of the gate-source capacitance peak in polysilicon TFTs

  • Author

    Tam, Simon W B ; Migliorato, Piero ; Izzard, Martin J. ; Reita, C.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • fYear
    1993
  • fDate
    23-24 Mar 1993
  • Firstpage
    42583
  • Lastpage
    42586
  • Abstract
    Analysis and modelling of the terminal capacitances of polysilicon TFTs are of great interest in view of the design and fabrication of digital and analog circuits. The authors present for the first time measurements of the gate-source capacitance (Cgs) in a wide frequency range (20 Hz-10 kHz), and propose a new model to explain the observed behaviour
  • Keywords
    capacitance; elemental semiconductors; semiconductor device models; silicon; thin film transistors; 20 Hz to 10 kHz; Si; gate-source capacitance peak; modelling; polysilicon TFTs; terminal capacitances;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Poly-Si Devices and Applications, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    231013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=286033