Title :
Characterisation of trapping states in poly-Si thin film transistors
Author_Institution :
Philips Res. Lab., Redhill, UK
Abstract :
Polycrystalline-silicon thin film transistors have been assessed using current based deep level transient spectroscopy. A continuous distribution of states was observed through the bad gap with a high density of tail states near the conduction band edge. Hot carrier stressing was shown to produce a spatially non-uniform increase in the density of states at the drain end of the device
Keywords :
deep level transient spectroscopy; elemental semiconductors; hot carriers; interface electron states; semiconductor device testing; silicon; thin film transistors; Si; conduction band edge; continuous distribution of states; deep level transient spectroscopy; hot carrier stressing; polysilicon TFT; tail states; thin film transistors; trapping states;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
