Large area shower implanter for thin film transistors

Author

Wu, Y ; Montgomery, J.H. ; Refsum, A. ; Mitchell, S.J.N. ; Armstrong, B.M. ; Gamble, H.S.

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ. of Belfast, UK

fYear

1993

fDate

23-24 Mar 1993

Firstpage

42522

Lastpage

42525

Abstract

Using a 30 cm diameter RIPE ion source, a large area low energy ion shower implanter has been developed for low cost TFT fabrication. The beam current density uniformity is ±3.5% over the centre 20 cm diameter. With magnetic field of 200 Gauss and RF power of 450 W, the extracted ion current density at 3×10^-4 mbar hydrogen pressure and 3 KV screen voltage was 100 μA/cm². For 3 KeV and five minute phosphorus implantation, dose and projected range are 2.48×10¹⁶ cm^-2 and 83 Å, respectively. The fine rectifier characteristics of implanted diodes show that this shower implanter is suitable for TFT contact layer formation

Keywords

current density; ion implantation; thin film transistors; 200 G; 3 kV; 3 keV; 3*10^-4 mbar; 30 cm; 450 W; 5 min; RF power; RIPE ion source; Si:P; TFT contact layer formation; beam current density uniformity; dose; extracted ion current density; large area low energy ion shower implanter; projected range; rectifier characteristics; resonant inductively coupled plasma excitation; screen voltage; thin film transistors;

fLanguage

English

Publisher

iet

Conference_Titel

Poly-Si Devices and Applications, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

231015