Title :
Large area shower implanter for thin film transistors
Author :
Wu, Y ; Montgomery, J.H. ; Refsum, A. ; Mitchell, S.J.N. ; Armstrong, B.M. ; Gamble, H.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ. of Belfast, UK
Abstract :
Using a 30 cm diameter RIPE ion source, a large area low energy ion shower implanter has been developed for low cost TFT fabrication. The beam current density uniformity is ±3.5% over the centre 20 cm diameter. With magnetic field of 200 Gauss and RF power of 450 W, the extracted ion current density at 3×10-4 mbar hydrogen pressure and 3 KV screen voltage was 100 μA/cm2. For 3 KeV and five minute phosphorus implantation, dose and projected range are 2.48×1016 cm-2 and 83 Å, respectively. The fine rectifier characteristics of implanted diodes show that this shower implanter is suitable for TFT contact layer formation
Keywords :
current density; ion implantation; thin film transistors; 200 G; 3 kV; 3 keV; 3*10-4 mbar; 30 cm; 450 W; 5 min; RF power; RIPE ion source; Si:P; TFT contact layer formation; beam current density uniformity; dose; extracted ion current density; large area low energy ion shower implanter; projected range; rectifier characteristics; resonant inductively coupled plasma excitation; screen voltage; thin film transistors;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
