Title :
Low resistance, low-bias current PIN diodes
Author :
Curby, R. ; Nevin, L.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Low resistance PIN diodes with Rsbelow 0.2 ohm at 20 mA and a reverse bias capacitance below 1.1 pF at -20 V will be discussed.
Keywords :
Capacitance; Charge carrier lifetime; Conductivity; Current density; Dielectric constant; Diodes; Equations; Numerical analysis; Silicon; Surface resistance;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155504
