Title :
Design and operation of poly-Si analogue circuits
Author_Institution :
GEC-Marconi Hirst Res. Centre, Wembley, UK
Abstract :
Describes the use of poly-Si thin film transistors (TFTs) to fabricate analogue circuits and in particular operational amplifiers (op amps). A brief description of the poly-Si technology peculiarities and their effects on the design of analogue circuits are given and some results obtained with low temperature processes on two designs discussed
Keywords :
MOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; operational amplifiers; thin film transistors; TFTs; analogue circuits; circuit design; designs; low temperature processes; operation; operational amplifiers; poly-Si technology peculiarities; polycrystalline Si; thin film transistors;
Conference_Titel :
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location :
London
