An Improved Model for the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Author

Chen Cao ; Benlan Shen ; Bing Zhang ; Longsheng Wu ; Junfeng Wang

Author_Institution

Dept. of Integrated Circuit Design, Inst. of Microelectron. Technol., Xi´an, China

Volume

3

Issue

4

fYear

2015

fDate

Jul-15

Firstpage

306

Lastpage

310

Abstract

An improved analytical model for quantifying the full well capacity in pinned photodiode (PPD) CMOS image sensors is proposed. The model captures the characteristics of the realistic technology-induced vertical doping nonuniformity in photon sensing N-type area of the PPD structure and the voltage dependency of the PPD capacitance, respectively, both of which were neglected in the existing works. Excellent agreement between measured and predicted data shows that the proposed model fits a wider range of technology conditions for a wider spectra responding compared to the up-to-date reported model.

Keywords

CMOS image sensors; capacitance; p-i-n photodiodes; photodetectors; semiconductor doping; FWC; PPD capacitance; PPD structure; full well capacity; photon sensing N-type area; pinned photodiode CMOS image sensors; realistic technology-induced vertical doping nonuniformity; technology conditions; voltage dependency; Data models; Doping; Implants; Junctions; Microelectronics; Photonics; Semiconductor process modeling; CMOS image sensors; analytical model; full well capacity (FWC); full well capacity(FWC); pinned photodiode (PPD); pinned photodiode(PPD);

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2423233

Filename

7086280