DocumentCode
286051
Title
Low temperature poly-Si technologies and comparison with high temperature poly-Si processes
Author
Nijs, J.F. ; Pattyn, H. ; Baert, K.
Author_Institution
IMEC, Leudens, Belgium
fYear
1993
fDate
23-24 Mar 1993
Abstract
Polysilicon TFTs in combination with liquid crystals can be used for direct view LCDs as well as for projection displays. With glass substrates a low temperature process (T⩽630°C) has to be used. The authors discuss the formation poly-Si thin films, gate insulator, source and drain formation, and H passivation
Keywords
elemental semiconductors; hydrogen; insulated gate field effect transistors; liquid crystal displays; passivation; semiconductor growth; silicon; thin film transistors; 630 C; Si:H; direct view LCDs; drain formation; gate insulator; low temperature process; passivation; polycrystalline Si films; polysilicon TFTs; projection displays; semiconductors; source formation;
fLanguage
English
Publisher
iet
Conference_Titel
Poly-Si Devices and Applications, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
231033
Link To Document