Title :
The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation
Author :
Tokunaga, T. ; Sasaki, K. ; Kuroda, K. ; Iijima, T. ; Jang, B. ; Hayashi, Y. ; Afre, R.A. ; Tanemura, M.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Nagoya, Japan
Abstract :
The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.
Keywords :
II-VI semiconductors; nanofabrication; nanowires; oxidation; plasma deposition; scanning electron microscopy; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; zinc; zinc compounds; NW surface; Si; ZnO-Zn; nanowire; plasma-assisted molecular beam irradiation; scanning electron microscopy; size 80 nm; transmission electron microscopy; Nanowires; Oxidation; Radiation effects; Substrates; Zinc oxide; TEM; Zinc oxidation; molecular beam;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991618
