• DocumentCode
    2860620
  • Title

    A high-density, read/write, nonvolatile charge-addressed memory

  • Author

    Fagan, J. ; White, M. ; Lampe, D.

  • Author_Institution
    Westinghouse Electric Corp., Baltimore, MD, USA
  • Volume
    XIX
  • fYear
    1976
  • fDate
    18-20 Feb. 1976
  • Firstpage
    184
  • Lastpage
    185
  • Abstract
    A high density, read/write, 16K-bit (0.5 mil2/bit) non-volatile charge-addressed memory with TTL compatibility and full decoding will be described. The memory cell is a MNOS structure with crosspoint geometry and address-decode features.
  • Keywords
    Capacitors; Charge coupled devices; Clocks; Electrons; Nonvolatile memory; Random access memory; Read-write memory; Shift registers; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1976.1155518
  • Filename
    1155518
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2860620