DocumentCode
2860724
Title
High-speed GaAs MSI
Author
Van Tuyl, R. ; Liechti, C.
Author_Institution
Hewlett-Packard Laboratories, Palo Alto, CA, USA
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
20
Lastpage
21
Abstract
A report on a process for the medium-scale integration of MESFET digital circuits on GaAs will be offered. Gate propagation delays < 100 ps with fanout of two and binary division from dc to 2 GHz have been achieved.
Keywords
Frequency conversion; Gallium arsenide; Geometry; Logic circuits; Logic gates; MESFETs; Parasitic capacitance; Power dissipation; Propagation delay; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155523
Filename
1155523
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