Title :
A 1024-bit ECL RAM with 15-ns access time
Author :
Rathbone, R. ; Ernst, Herbert ; Glock, H. ; Schwabe, Ulrich
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
DEVELOPMENT SAMPLES of a 1024-bit bipolar ECI, RAM have shown typical address access time of 15 ns at 400 mW dissipation. This access time is faster than the previously rcported 1K RAM access time of 25 ns´. Results were achieved by a combination of oxide isolation technology with N-epitaxy2 - OXIS - and improved ECL circuit design. Measurements agree well with calculations made using a fast transient analysis program.
Keywords :
Capacitance; Carbon capture and storage; Circuit synthesis; Isolation technology; Pulse amplifiers; Springs; Switches; Switching circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155527
