DocumentCode :
2860834
Title :
A high-speed 16K-bit NMOS RAM
Author :
Itoh, Kenji ; Shimohigashi, K. ; Chiba, Kazuya ; Taniguchi, Kazuhiro ; Kawamoto, Yasutaka
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
XIX
fYear :
1976
fDate :
18-20 Feb. 1976
Firstpage :
140
Lastpage :
141
Abstract :
A 16K-BIT NMOS dynamic memory array, designed lor high speed main frame memory applications, will be described. High speed has been achieved with a sense circuit for one tramistorcell, in combination with improved N-channel silicon-gate technology.
Keywords :
Circuit testing; Clocks; DC generators; MOS devices; Preamplifiers; Random access memory; Read-write memory; Signal generators; Timing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1976.1155530
Filename :
1155530
Link To Document :
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