DocumentCode
2860873
Title
Reprogrammable nonvolatile semiconductor memories
Author
Anderson, Lindsay
Author_Institution
Bell Laboratories, Allentown, PA, USA
Volume
XIX
fYear
1976
fDate
18-20 Feb. 1976
Firstpage
88
Lastpage
88
Abstract
Whether these memories are ready for widespread use and if so, who needs them, are key factors today. Related topics to be discussed include retentivity, write-erase capability, testing and applications, with an eye on competition from more established technologies.
Keywords
Fabrication; Geometry; Nonvolatile memory; Physics; Power supplies; Random access memory; Read-write memory; Semiconductor device reliability; Semiconductor memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1976.1155532
Filename
1155532
Link To Document