DocumentCode
2860930
Title
Studies of oxide to polymer bonding for 3D IC
Author
Lin, S.L. ; Huang, W.C. ; Chen, K.N.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
The two bonds important in BCB bonding are discussed. According to the principles of silicon oxide bonding and the nature of these two bonds, we established the most likely mechanism for BCB to oxide bonding. We compare BCB to PECVD oxide bonding with BCB to thermal oxide bonding and investigate the difference in bonding strength. We also observe the BCB surface changes before and after bonding.
Keywords
integrated circuit bonding; polymers; silicon compounds; three-dimensional integrated circuits; 3D IC; BCB bonding; BCB surface; PECVD oxide bonding; SiO; bonding strength; polymer bonding; thermal oxide bonding; Annealing; Bonding; Integrated circuits; Polymers; Silicon; Surface structures; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991641
Filename
5991641
Link To Document