Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon schottky barrier field-effect transistors

We present our computational study on the transport properties of intrinsic armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon (AGNR & ZGNR) Schottky barrier field-effect transistors (SBFETs). Using ab initio models, we observed that the metal-induced gap states increase the OFF-state current (I_OFF) significantly of very short channel devices and the ON/OFF current ratio (I_ON/I_OFF) degrades as the ribbon width increases. Our device performance comparison indicates that while ZGNR SBFETs provide a lower subthreshold swing, AGNR SBFETs provide a lower I_OFF and higher I_ON/I_OFF at similar ribbon widths.