Title :
1.3 μm InAs quantum dots with high density, uniformity, and quality
Author :
Amano, T. ; Sugaya, T. ; Yamauchi, S. ; Komori, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Japan Sci. & Technol. (JST), Tsukuba
Abstract :
We realized a high density, uniformity and quality InAs quantum dot structure at 1.3 mum with for optical devices that employs a dimeric arsenic source and a gradient composition strain reducing layer.
Keywords :
III-V semiconductors; indium compounds; optical materials; photoluminescence; semiconductor quantum dots; InAs; dimeric arsenic source; optical devices; photoluminescence; quantum dot structure; size 1.3 mum; Atom optics; Atomic layer deposition; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Optical buffering; Optical devices; Quantum dots; Scanning electron microscopy; Temperature dependence; (140.3380); (160.6000);
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627595
