Title :
Design, fabrication, and operating characteristics of broadband quantum dot superluminescent diodes
Author :
Ray, S.K. ; Alexander, R. ; Kennedy, K. ; Groom, K.M. ; Liu, H.Y. ; Hopkinson, M. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
Abstract :
We discuss methods to broaden the emission spectra of quantum dot superluminescent diodes. Such devices exhibit 85 nm wide; almost flat emission spectrum while operated CW at room temperature with output powers of 2.5 mW.
Keywords :
semiconductor quantum dots; superluminescent diodes; broadband quantum dot superluminescent diode design; diode fabrication; diode operating characteristics; flat emission spectra; power 2.5 mW; temperature 293 K to 298 K; Fabrication; Gallium arsenide; Indium; Light emitting diodes; Power generation; Quantum dots; Stationary state; Superluminescent diodes; Temperature; Wavelength measurement; 230.3670;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627596
