DocumentCode
2861123
Title
High power single mode lasers based on InAs/GaInAs quantum dot material with enhanced temperature stability
Author
Kaiser, W. ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Tech. Phys., Univ. of Wurzburg, Wurzburg
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
High power 915 nm quantum dot lasers with increased temperature stability of the emission wavelength (< 0.1 nm/K) were realized. By application of a lateral grating to tapered lasers a single mode emission of > 400 mW was achieved.
Keywords
III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser beams; laser modes; laser stability; optical materials; quantum dot lasers; thermal stability; InAs-GaInAs; emission wavelength; high power single mode laser; lateral grating; quantum dot material; tapered lasers; temperature stability; Laser modes; Laser stability; Optical materials; Power lasers; Quantum dot lasers; Temperature; (140.2020) Diode lasers; (140.3070) Infrared and far-infrared lasers; (140.3490) Lasers, distributed-feedback; (140.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627604
Filename
4627604
Link To Document